SKM195GB066D  Semikron Dual IGBT Module
SKM195GB066D  Semikron Dual IGBT Module
SKM195GB066D  Semikron Dual IGBT Module
SKM195GB066D  Semikron Dual IGBT Module

SKM195GB066D Semikron Dual IGBT Module

Price 1950.0 INR/ Piece

MOQ : 1 Piece

SKM195GB066D Semikron Dual IGBT Module Specification

  • Components
  • Contains two IGBT transistors and two freewheeling diodes.
  • Features
  • Low-loss, compact design, reliable dual configuration.
  • Input
  • Gate input voltage as per IGBT standard drive requirements.
  • Response Time
  • Fast switching capabilities as per IGBT technology.
  • IP Rating
  • Not rated; for use in protected enclosures.
  • Power Source
  • External DC supply required.
  • Interface
  • Screw terminals for power and control connections.
  • Output
  • High current output (collector-emitter) for power circuitry.
  • Operating Temperature
  • -40C to +150C junction temperature
  • Thermal Conductivity
  • Integrated metal baseplate for heat dissipation.
  • Power Supply
  • Requires external DC power supply for operation.
  • Usage
  • Power conversion, inverter systems, motor drives, UPS systems.
  • Product Type
  • Dual IGBT Module
  • Application
  • Industrial motor drives, power inverters, renewable energy applications.
  • Rated Voltage
  • 660V
  • Supply Voltage
  • Max 660V (DC bus voltage)
  • Size
  • Standard Semikron SEMiX case size
  • Dimension (L*W*H)
  • 106 mm x 62 mm x 38 mm
  • Function
  • Dual IGBT module for switching and amplification in power electronics.
  • Color
  • White body with black base and metal terminals.
  • Weight
  • Approx. 400g
  • Thickness
  • Approx. 38 mm
  • Capacity
  • 195A (collector current rating per module)
  • Current Rating
  • 195A
  • Frequency
  • Up to 20 kHz switching frequency
  • Mounting Type
  • Screw mounting with insulated baseplate.
  • Compliance
  • RoHS Compliant
  • Package
  • SEMiX standard industrial power module casing.
  • Reverse Voltage Diode
  • Integrated fast-freewheeling diode per IGBT leg.
  • Die Technology
  • Trench and Field Stop IGBT technology.
  • IC (Collector Current)
  • 195A continuous at case temperature 25C.
  • Gate-Emitter Voltage
  • 20V maximum.
  • Surge Current
  • 350A (1 ms peak)
  • Insulation Voltage
  • Basic insulation between terminals and heatsink up to 2500V AC.
  • Cooling
  • Requires heatsink for optimal performance.
  • VCE (Collector-Emitter Voltage)
  • 660V maximum rated.
 

SKM195GB066D Semikron Dual IGBT Module Trade Information

  • Minimum Order Quantity
  • 1 Piece
  • Supply Ability
  • 100 Pieces Per Month
  • Delivery Time
  • 7 Days
 
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